acpl-217 dc input , half-pitch phototransistor optocoupler data sheet description the acpl-217 is a dc-input single channel half-pitch phototransistor optocoupler which contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin so package. the input-output isolation voltage is rated at 3000 vrms. response time, tr, is 2s typically, while minimum ctr is 50% at input current of 5 ma acpl-217 pin layout features ? current transfer ratio (ctr: 50% (min) at i f = 5ma, v cc = 5v) ? high input-output isolation voltage (v iso = 3,000v rms ) ? non-saturated response time (tr: 2s (typ) at v cc = 10v, i c = 2ma, r l = 100 ) ? so package ? cmr 10kv/s (typical) ? safety and regulatory approvals - cul - iec/en/din en 60747-5-2 ? options available: C ctr ranks 0, a, b, c & d applications ? i/o interface for programmable controllers, computers. ? sequence controllers ? system appliances, measuring instruments ? signal transmission between circuits of diff erent potentials and impedances. lead (pb) free rohs 6 fully compliant r o hs 6 fu lly co m p l iant options a v ai l a bl e ; - xxxe d enotes a l ea d -free pro d uct 12 43 12 43 pin description 1 anode 2 cathode 3 emitter 4 collector
2 ordering information acpl-217-xxxx is ul recognized with 3000 vrms for 1 minute per ul1577 and canadian component acceptance notice #5. part number rohs compliant option package surface mount tape & reel ic orientation iec/en/din en 60747-5-2 quantity rank 0 50% 3 absolute maximum ratings parameter symbol acpl-217 units note storage temperature t s -55~125 c operating temperature t a -55~110 c average forward current i f(avg) 50 ma pulse forward current i fsm 1a reverse voltage v r 6v led power dissipation p i 65 mw collector current i c 50 ma collector-emitter voltage v ceo 80 v emitter-collector voltage v eco 7v isolation voltage (ac for 1min, r.h. 40~60%) v iso 3000 v rms 1min collector power dissipation p c 150 mw total power dissipation p tot 200 mw lead solder temperature 260c for 10 seconds solder refl ow temperature profi le recommended refl ow condition as per jedec standard, j-std-020 (latest revision). non-halide flux should be used.
4 electrical specifi cations (dc) over recommended ambient temperature at 25oc unless otherwise specifi ed. parameter symbol min. typ. max. units test conditions note forward voltage v f - 1.2 1.4 v i f = 20ma fig.6 reverse current i r --10 a v r = 5v terminal capacitance c t - 30 - pf v = 0, f = 1mhz collector dark current i ceo - - 100 na v ce = 48v, i f = 0 ma fig.12 collector-emitter breakdown voltage bv ceo 80 - - v i c = 0.5 ma, i f = 0 ma emitter-collector breakdown voltage bv eco 7--v i e = 100 a, i f = 0 ma current transfer ratio ctr 50 - 600 % i f = 5 ma, v ce = 5v ctr=(i c /if )* 100% saturated ctr ctr(sat) - 100 - % i f =1ma, v ce = 0.4v collector-emitter saturation voltage v ce (sat) - - 0.4 v i f = 8ma, i c = 2.4ma fig.14 isolation resistance r iso 5x10 10 1x10 11 - dc500v, r.h. 40~60% floating capacitance c f - 0.6 1 pf v = 0, f = 1mhz cut-off frequency (-3db) f c -80-khzv cc = 5v, i c = 2 ma, r l = 100 fig. 2,19 response time (rise) t r -2- s v cc = 10v, i c = 2 ma, r l = 100 fig. 1 response time (fall) t f -3- s turn-on time t on -3- s turn-off time t off -3- s turn-on time t on -2- s v cc = 5v, i f = 16 ma, r l = 1.9k fig. 1, 17 storage time t s -25- s turn-off time t off -40- s common mode rejection voltage cmr - 10 - kv/ s ta=25oc, r l =470 , v cm =1.5kv(peak), i f =0ma, v cc =9v, v np =100mv fig.20 figure 1. switching time test circuit i f r l v cc v ce i f v ce t on t off 90% 10% t r t f t s i f v ce t on t off 90% 10% t r t f t s r l v cc output r d figure 2. frequency response test circuit
5 0 10 20 30 40 50 60 -25-51535557595115 forward current, i f (ma) ambient temperature, ta(o c) acpl-217 0 20 40 60 80 100 120 140 160 -25 0 25 50 75 100 125 collector power dissipation, pc(mw) ambient temperature, ta(o c) acpl-217 10 100 1000 10000 0.0001 0.0010 0.0100 0.1000 1.0000 peak forward current, i fp (ma) duty ratio ta = 25 o c pulse width 100 s 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 forward current, i f (ma) forward voltage, v f (v) ta = 110 oc 75 o c 50 o c 25 o c 0oc -30o c -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1 10 100 forward current, i f (ma) v f / ta (mv/ o c) forward voltage temperature coefficient 1 10 100 1000 0.5 1 1.5 2 2.5 3 pulse forward voltage, v fp (v) pulse forward current, i fp (ma) repetitive frequency=100hz ta=25oc pulse width 10 s figure 3. forward current vs. ambient temperature. figure 4. collector power dissipation vs. ambient temperature figure 5. pulse forward current vs. duty cycle ratio figure 6. forward current vs. forward voltage figure 7. forward voltage temperature coeffi cient vs. forward current figure 8. pulse forward current vs. pulse forward voltage
6 0 10 20 30 40 50 0510 collector current, ic(ma) collector-emitter voltage, vce(v) i f =5ma 10ma 30ma t a = 25o c p c (max)=150mw 50ma 20ma 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 collector-emitter voltage, v ce (v) collector currrent, ic( ma) i f = 2ma 5ma 10ma 20ma 30ma 50ma 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 forward current, i f (a) collector current, i c (a) v ce = 0.4v 10v 5v 1.e-10 1.e-08 1.e-06 -25-51535557595 ambient temperature, t a ( o c) collector dark current, i ceo (a) v ce = 48v 24v 10v 5v 10 100 1000 0.0001 0.001 0.01 0.1 forward current, i f (a) current transfer ratio, ctr (%) 5v v ce = 0.4v 10v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 -30 5 40 75 110 collector-emitter saturation voltage, v ce (sat) (v) ambient temperature, ta(o c) i f = 20ma, i c = 1ma i f = 1ma, i c = 0.2ma i f = 8ma, c = 2.4ma i figure 9. collector current vs. collector-emitter voltage figure 10. collector current vs. small collector-emitter voltage figure 11. collector current vs. forward current f igure 12. collector dark current vs. ambient temperature figure 13. current transfer ratio vs. forward current figure 14. collector-emitter saturation voltage vs. ambient temperature
0.1 1 10 100 -25 0 25 50 75 100 ambient temperature, ta ( o c) collector current, i c (ma) 1ma 10ma 25ma i f = 0.5ma 5ma 0.1 1 10 100 -20 0 20 40 60 80 100 ambient temperature, ta ( oc) t on t s i f = 16ma v cc = 5v r l = 1.9k switching time, t ( s) t off 0 1 2 3 4 5 0 5 10 15 20 forward current, i f (ma) collector-emitter saturation voltage, v ce(sat) (v) i c = 10ma 7ma 5ma 3ma 1ma 0.5ma ta = 25oc -8 -6 -4 -2 0 1 10 100 frequency, f (khz) vo, (db) v cc = 5v i c = 2ma t a = 25oc r l = 100 1k vo r l vcc v cm v cm dv/dt vo v cp v np 470 9v (high voltage pulse) v cp : voltage that is generated by the displacement current in floating capacitance between primary and secondary sides. v cp ? (dv/dt)xc f xr l 0 1 10 100 1000 1 5 10 50 100 load resistance, rl (k ? switching time, t ( s) i f =16ma v cc =5v ta=25c t on t off t s figure 15. collector current vs. ambient temperatur e figure 16. switching time vs. load resistance figure 17. switching time vs. ambient temperature figure 18. collector-emitter saturation voltage vs. forward current figure 19. frequency response figure 20. cmr test circuit for pro d uct infor m ation an d a co m plete list of d istri b utors, please go to our we b site: www.avagotech.com a v ago, a v ago technologies, an d the a logo are tra d e m arks of a v ago technologies in the unite d s tates an d other countries. data su b ject to change. cop y right ? 2005-2011 a v ago technologies. all rights reser v e d . av02-0470en - august 3, 2011
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